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| SEMICONDUCTOR TECHNICAL DATA General Description KHB8D8N25P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB8D8N25P A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 9.9 + 0.2 A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies. FEATURES VDSS= 250V, ID= 8.8A Drain-Source ON Resistance : RDS(ON)=450m @VGS = 10V Qg(typ.) = 29.5nC 15.95 MAX 1.3+0.1/-0.05 _ 0.8 + 0.1 _ 3.6 + 0.2 _ 2.8 + 0.1 3.7 0.5+0.1/-0.05 1.5 _ 13.08 + 0.3 1.46 _ 1.4 + 0.1 _ 1.27 + 0.1 _ 2.54 + 0.2 _ 0.2 4.5 + _ 2.4 + 0.2 _ 9.2 + 0.2 1. GATE 2. DRAIN 3. SOURCE P Q MAXIMUM RATING (Ta=25 CHARACTERISTIC ) RATING SYMBOL KHB8D8N25F UNIT KHB8D8N25P KHB8D8N25F2 250 30 8.8 35.2 285 7.4 5.5 74 PD 0.59 Tj Tstg 150 -55 150 0.3 W/ 38 8.8* 35.2* mJ D K TO-220AB KHB8D8N25F A F C Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Ta=25 Derate above 25 VDSS VGSS ID IDP EAS EAR dv/dt V V A O B E G DIM MILLIMETERS L M J R mJ V/ns Q 1 N N H 2 3 A B C D E F G H J K L M N O Q R _ 10.16 + 0.2 _ 15.87 + 0.2 _ 2.54 + 0.2 _ 0.8 + 0.1 _ 3.18 + 0.1 _ 3.3 + 0.1 _ 0.2 12.57 + _ 0.5 + 0.1 13.0 MAX _ 3.23 + 0.1 1.47 MAX 1.47 MAX _ 2.54 + 0.2 _ 6.68 + 0.2 _ 4.7 + 0.2 _ 2.76 + 0.2 W 1. GATE 2. DRAIN 3. SOURCE Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient TO-220IS (1) KHB8D8N25F2 A C F RthJC RthJA 1.69 62.5 3.29 62.5 /W /W S E P DIM MILLIMETERS * : Drain current limited by maximum junction temperature. K L L R PIN CONNECTION D D M D J N N H G 1 2 3 A B C D E F G H J K L M N P Q R S _ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ 3.2 +0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 +0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ Q G B 1. GATE 2. DRAIN 3. SOURCE S TO-220IS 2007. 5. 10 Revision No : 0 1/7 KHB8D8N25P/F/F2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Drain Cut-off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance BVDSS BVDSS/ Tj Vth IDSS IGSS RDS(ON) gFS ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=VGS, ID=250 A VDS=250V, VGS=0V, VGS= 30V, VDS=0V VGS=10V, ID=4.4A VDS=40V, ID=4.4A (Note4) 250 2.0 0.27 360 7.6 4.0 10 100 450 V V/ V A nA m S Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS VGS Note 5) Essentially independent of operating temperature. 2007. 5. 10 Revision No : 0 2/7 KHB8D8N25P/F/F2 Fig1. ID - VDS VGS TOP : 15.0 V 10.0 V 8.0 V 7.0 V 101 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Fig2. ID - VGS VDS = 40V 250s Pulse Test Drain Current ID (A) Drain Current ID (A) 101 150 C 100 100 25 C -55 C 10-1 10-1 100 101 10-1 2 4 6 8 10 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) Fig3. BVDSS - Tj Normalized Breakdown Voltage BVDSS (V) 1.2 VGS = 0V IDS = 250A Fig4. RDS(ON) - ID 2.5 On - Resistance RDS(ON) () 2.0 1.1 1.5 VGS = 10V 1.0 1.0 0.9 0.5 VGS = 20V 0.8 -100 0.0 -50 0 50 100 150 0 6 12 18 24 30 Junction Temperature Tj ( C ) Drain Current ID (A) Fig5. IS - VSD 3.0 VGS = 10V 250s Pulse Test VGS =10V ID = 8.8A Fig6. RDS(ON) - Tj Reverse Drain Current IS (A) 101 Normalized On Resistance 0.8 1.0 1.2 1.4 1.6 2.5 2.0 1.5 1.0 0.5 10 0 150 C 25 C 10-1 0.2 0.4 0.6 0.0 -100 -50 0 50 100 150 Source - Drain Voltage VSD (V) Junction Temperture Tj ( C ) 2007. 5. 10 Revision No : 0 3/7 KHB8D8N25P/F/F2 Fig7. C - VDS 3500 3000 Ciss Fig8. Qg- VGS Gate - Source Voltage VGS (V) Frequency =1MHz 12 I =8.8A D 10 8 6 4 2 0 0 10 20 30 40 VDS = 50V VDS = 125V VDS = 200V Capacitance (pF) 2500 2000 1500 1000 500 0 10-1 100 101 Coss Crss Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Fig9. Safe Operation Area (KHB8D8N25P) 102 Operation in this area is limited by RDS(ON) Fig10. Safe Operation Area (KHB8D8N25F, KHB8D8N25F2) 102 Operation in this area is limited by RDS(ON) 100 s 1ms 10 ms 100 ms Drain Current ID (A) Drain Current ID (A) 100s 101 101 10ms DC 1ms 100 DC 100 TC= 25 C Tj = 150 C Single nonrepetitive pulse 10-1 TC= 25 C Tj = 150 C Single nonrepetitive pulse 10-1 100 101 102 10-2 0 10 101 102 Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V) Fig11. ID - Tj 10 8 6 4 2 0 25 50 75 100 125 150 Drain Current ID (A) Junction Temperature Tj ( C ) 2007. 5. 10 Revision No : 0 4/7 KHB8D8N25P/F/F2 Fig12. Transient Thermal Response Curve Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 10-1 0.1 0.05 PDM t1 t2 Single Pulse 0.02 0.01 - Duty Factor, D= t1/t2 10-3 10-2 10-1 100 101 10-2 10-5 10-4 TIME (sec) Fig13. Transient Thermal Response Curve Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 10-1 0.1 0.05 PDM t1 t2 0.02 0.01 10-2 10-5 Single Pulse - Duty Factor, D= t1/t2 10-3 10-2 10-1 100 101 10-4 TIME (sec) 2007. 5. 10 Revision No : 0 5/7 KHB8D8N25P/F/F2 Fig14. Gate Charg VGS 10 V ID Fast Recovery Diode 0.8 VDSS 1.0 mA ID VDS Qgs VGS Qgd Qg Q Fig15. Single Pulsed Avalanche Energy EAS= 1 LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 0.5 VDSS 25 VDS ID(t) VDD 10 V VGS VDS(t) Time tp 2007. 5. 10 Revision No : 0 6/7 KHB8D8N25P/F/F2 Fig16. Resistive Load Switching VDS RL 0.5 VDSS 25 VGS 10% tf 10V td(on) VGS ton tr td(off) toff 90% VDS Fig17. Source - Drain Diode Reverse Recovery and dv /dt Body Diode Forword Current DUT VDS IF ISD (DUT) IRM di/dt 0.8 x VDSS driver IS VDS (DUT) Body Diode Reverse Current Body Diode Recovery dv/dt VSD 10V VGS Body Diode Forword Voltage drop VDD 2007. 5. 10 Revision No : 0 7/7 |
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